Neutral component placeholder
Overview
BAP50-03,115 is an NXP silicon PIN diode for general RF applications in a two-lead SOD323 (SC-76) surface-mount package. At a junction temperature of 25 degrees C, the datasheet specifies a maximum diode capacitance of 0.55 pF at 1 V reverse bias and 1 MHz, and a maximum forward resistance of 5 ohms at 10 mA and 100 MHz. Absolute maximum ratings are 50 V reverse voltage and 50 mA forward current; these limits are not recommended operating conditions. Include quantity and delivery requirements when requesting a quote.
Core specification
Part numberBAP50-03,115
ManufacturerNXP
Series / designationBAP50-03
CategoryDiodes and Rectifiers
SubcategoryDiodes and Rectifiers
AvailabilityRemote Stock: 781 pcs
LifecycleInformation on request.
PackageInformation on request.
Lead timeConfirm through RFQ
Technical parameters
Package
SOD323 / SC-76, 2 leads
Series
BAP50-03
Reverse voltage (absolute maximum)
50 V maximum
Forward current (absolute maximum)
50 mA maximum
Junction temperature (absolute maximum)
-65 to +150 degrees C
Diode capacitance
0.55 pF maximum; VR = 1 V; f = 1 MHz; Tj = 25 degrees C
Forward resistance
5 ohms maximum; IF = 10 mA; f = 100 MHz; Tj = 25 degrees C; datasheet AQL footnote applies
Forward voltage
1.1 V maximum; IF = 50 mA; Tj = 25 degrees C
Reverse current
100 nA maximum; VR = 50 V; Tj = 25 degrees C
Manufacturer resources
Applications
- RFQ handling
- replacement sourcing
- procurement review
Sourcing Notes
- Use the exact manufacturer part number for RFQ and cross-reference review.
- Review the listed technical parameters before approving any substitution.
- Open the datasheet link for package, rating, and compliance confirmation.